Publication List

1. M. Miljak, E. Babic, A. Hamzic, G. Bratina, and Z. Marohnic, Some Properties Of Melt-Produced YBaCuO Wire, Supercond. Sci. Technol. 1, 141 (1988).

2. G. Bratina, G. Ceccone, A. Franciosi, Micovic, M., L. Sorba, F. Tommasini, and J. F. Walker, A Novel Facility For MBE Growth And In-Situ High Resolution XPS Characterization Of III-V And Ii-Vi Semiconductor Heterostructures, Vuoto 20, 565 (1990)

3. G. Bratina, L. Sorba, G. Ceccone, A. Antonini, M. Micovic, J. F. Walker, F. Tommasini, and A. Franciosi, In Situ High Resolution XPS Analysis Of Alas-GaAs Heterostructures With Tunable Band Offset, Proceedings of 20th International Conference On The Physics Of Semiconductors, E. M. Anastassakis, J. D. Joannopoulos (Eds) (World Scientific, Singapore 1990)

4. M. Berz, J. F. Walker, E. F. Steigmeier, F. K. Reinhart, L. Sorba, G. Bratina, and A. Franciosi, Exciton Mediated Electronic Intrasubband Scattering, Spin Density Excitation Versus Single Particle Excitation. Proceedings of 20th International Conference On The Physics Of Semiconductors, E. M. Anastassakis, J. D. Joannopoulos (Eds) (World Scientific, Singapore 1990)

5. G. Bratina, L. Sorba, A. Antonini, L. Vanzetti, and A. Franciosi, Epitaxial Growth And Interface Parameters Of Si Layers On GaAs(001) And Alas(001) Substrates J. Vac. Sci. Technol.B 9, 2225 (1991).

6. L. Sorba, G. Bratina, G. Ceccone, A. Antonini, J.F. Walker, M. Micovic, and A. Franciosi, Tuning Alas-GaAs Band Discontinuities And The Role Of Si-Induced Local Interface Dipoles. Phys. Rev. B 43, 2450 (1991)

7. G. Ceccone, G. Bratina, L. Sorba, A. Antonini, and A. Franciosi, Tuning Alas-GaAs Heterostructure Properties By Means Of Mbe-Grown Si Interface Layers, Surf. Sci. 251/252 (1991)

8. L. Sorba, G. Bratina, A. Franciosi, L. Tapfer, G. Scamarcio, V. Spagnolo, and E. Molinari, Si-GaAs(001) Superlattices, Appl. Phys. Lett. 61, 1570 (1992)

9. L. Vanzetti, X. Yu, A. Raisanen, L. Sorba, G. Haugstad, G. Bratina, and A. Franciosi, Engineering ZnSe-GaAs Band Offsets, J. Cryst. Growth 117, 573 (1992)

10. G. Bratina, L. Sorba, G. Biasiol, L. Vanzetti, and A. Franciosi, Alas-GaAs Heterojunction Engineering By Means Of Group IV Interface Layers, Materials Research Society Symposia Proceedings 240, 603 (1992)

11. G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, A. Franciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Microscopic Capacitors And Neutral Interfaces In III-V/IV/III-V Semiconductor Heterostructures, Phys. Rev. Lett. 69, 1283 (1992)

12. G. Bratina, L. Sorba, A. Antonini, G. Biasiol, and A. Franciosi, Alas-GaAs Heterojunction Engineering By Means Of Group-IV Elemental Interface Layers, Phys. Rev. B 45, 4528 (1992)

13. L. Sorba, G. Bratina, A. Antonini, A. Franciosi, L. Tapfer, A. Migliori, and P. Merli, Structure And Local Dipole Of Si Interface Layers In Alas-GaAs Heterostructures, Phys. Rev. B 46, 6834 (1992)

14. G. Scamarcio, V. Spagnolo, E. Molinari, L. Tapfer, L. Sorba, G. Bratina, and A. Franciosi, Phonons In Si/GaAs Superlattices, Phys. Rev. B 46, 7296 (1992)

15. G. Scamarcio, V. Spagnolo, E. Molinari, L. Tapfer, L. Sorba, G. Bratina, and A. Franciosi, Vibrational Properties Of Si/GaAs Superlattices, Superlattices Microstruct. 12, 429 (1992)

16. L. Sorba, G. Biasiol, G. Bratina, R. Nicolini, and A. Franciosi, Charged Versus Neutral Interfaces In III-V/Ge Quantum Wells J. Cryst. Growth 127, 93 (1993)

17. L. Sorba, G. Bratina, A. Franciosi, L. Tapfer, G. Scamarcio, V. Spagnolo, A. Migliori, P. Merli, and E. Molinari, Si-GaAs(001) Superlattice Structure, J. Cryst. Growth 127, 121 (1993)

18. G. Bratina, R. Nicolini, L. Sorba, L. Vanzetti, Guido Mula, X. Yu, and A. Franciosi, ZnSe-GaAs Heterojunction Parameters J. Cryst. Growth, 127, 387 (1993)

19. J. E. Angelo, W. W. Gerberich, G. Bratina, L. Sorba, and A. Franciosi, Effects Of Surface Reconstruction On CdTe/GaAs(001) Interface Structure, J. Cryst. Growth 130, 459 (1993)

20. G. Biasiol, L. Sorba, G. Bratina, and A. Franciosi Modification Of Heterojunction Band Offsets At III-V/IV/III-V Interfaces. SPIE Proceedings Series 1985, 92 (1993)

21. A. Franciosi, L. Sorba, G. Bratina, and G. Biasiol, Modification Of Heterojunction Band Offsets At III-V/IV/III-V Interfaces. J. Vac. Sci. Technol. B 11, 1628 (1993)

22. J. E. Angelo, W. W. Gerberich, W. M. Stobbs, G. Bratina, L. Sorba, and A. Franciosi, The Coherency Loss Microstructure At A CdTe/GaAs(001) Interface, Philos. Mag. Lett. 67, 279 (1993)

23. G. Bratina, L. Vanzetti, R. Nicolini, L. Sorba, X. Yu, A. Franciosi, G. Mula, and A. Mura, Microscopic Control Of ZnSe-GaAs Heterojunction Band Offsets, Phys. Rev. B 185, 557 (1993).

24. L. Sorba, G. Bratina, G. Biasiol, and A. Franciosi, Microscopic Control Of Band Offsets In Semiconductor Heterostructures, Proceedings Of The 4th International Conference on Formation Of Semiconductor Interfaces, (World Scientific, Singapore, 1994), p. 589

25. J. E. Angelo, W. W. Gerberich, G. Bratina, L. Sorba, A. Franciosi, and M. J. Mills, TEM Investigations Of CdTe/GaAs(001) Interfaces, Materials Research Society Symposium Proceedings 319 125 (1994)

26. R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, L. Sorba, A. Mura, J. E. Angelo, and W. W. Gerberich, A. Franciosi, Local Interface Composition And Band Offset Tuning In ZnSe-GaAs(001) Heterostructures, Materials Research Society Symposia Proceedings 326, (1994), p.3

27. L. Sorba, G. Bratina, G. Biasiol, A. Franciosi, Microscopic Control Of Band Offsets In Semiconductor Heterostructures, Formation Of Semiconductor Interfaces: Proceedings Of The 4th International Conference, B. Lengeler (Ed.), (World Scientific, Singapore, 1994), p. 589.

28. G. Bratina, G. Biasiol, L. Vanzetti, A. Bonanni, L. Sorba, and A. Franciosi, Nanosize Stress Concentrators At Facets In Zn1-Xcdxse/ZnSe Multiple Quantum Well Laser Structures, II-VI Blue/Green Laser Diodes, SPIE Proceedings Series, 2346 (SPIE, Washington: 1994) p. 180

29. M. Cantile, L. Sorba, P. Faraci, S. Yildirim, G. Biasiol, G. Bratina, A. Franciosi, T. J. Miller, M. I. Nathan, L. Tapfer, Modification Of Al/GaAs(001) Schottky Barriers By Means Of Heterovalent Interface Layers, J. Vac. Sci. Technol. B 12, 2653 (1994)

30. G. Bratina, L. Sorba, A. Antonini, G. Ceccone, R. Nicolini, G. Biasiol, A. Franciosi, J. E. Angelo, and W. W. Gerberich, Band Offsets And Strain In CdTe-GaAs Heterostructures, Phys. Rev. B 48, 8899 (1993)

31. G. Biasiol, L. Sorba, G. Bratina, and A. Franciosi, Modification Of Heterojunction Band Offsets At III-V/IV/III-V Interfaces, Physical Concepts And Materials For Novel Optoelectronic Device Applications II, SPIE Proceedings, 1985, 92 (1993)

32. I. Karpov, G. Bratina, L. Sorba, A. Franciosi, M. G. Simmonds, and W. L. Gladfelter Chemical Vapor Deposition Of Al From Dimethylethylamine Alane On GaAs(100)C(4x4) Surfaces, J. Appl. Phys. 76, 3471 (1994)

33. R. Nicolini, L. Vanzetti, G Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni, R. Resta, A. Baldereschi, J. E. Angelo, and W. W. Gerberich, Local Interface Composition And Band Discontinuities In Heterovalent Heterostructures, Phys. Rev. Lett. 72, 294 (1994)

34. J. E. Angelo, W. W. Gerberich, G. Bratina, L. Sorba, A. Franciosi, and M. J. Mills, TEM Investigations Of CdTe/GaAs(001) Interfaces, Materials Research Society Symposium Proceedings, 319, 178 (1994)

35. G. Bratina, L. Vanzetti, L. Sorba, Lack Of Band-Offset Transitivity For Semiconductor Heterojunctions With Polarorientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001), Phys. Rev. B, 50, 11723 (1994)

36. L. Sorba, L. Vanzetti, G. Biasiol, G. Bratina, A. Franciosi, 1 eV-wide Tunability Of Schottky Barriers In Al/Si/GaAs(001) Junctions, Proceedings of the 22nd International Conference On The Physics Of Semiconductors, D. J. Lockwood (Ed.). (World Scientific, Singapore, 1995), p 584.

37. L. Vanzetti, A. Bonanni, G. Bratina, L. Sorba, A. Franciosi, M. Lomascolo, D. Greco, R. Cingolani, Influence Of Growth Parameters On The Properties Of ZnSe-GaAs(001) Heterostructures, J. Cryst. Growth 150, 765 (1995)

38. I. Karpov, N. Venkateswaran, G. Bratina, W. Gladfelter, A. Franciosi, L. Sorba, Arsenic Cap Layer Desorption And The Formation Of GaAs(001) c(4x4) Surfaces, J. Vac. Sci. Technol. B 13, 2041 (1995)

39. G. Bratina, L. Vanzetti, A. Franciosi, Cross-Sectional Lateral-Force Microscopy Of Semiconductor Heterostructures And Multiple Quantum Wells. Phys. Rev. B 52, R8625 (1995)

40. J. E. Angelo, W. W. Gerberich, A. Franciosi, G. Bratina, L. Sorba, Defect Structure At A CdTe(111)/GaAs(001) Interface, Thin Solid Films 271, 117 (1995)

41. M. Lazzarino, T. Ozzello, G. Bratina, J. Paggel J., L. Vanzetti, L. Sorba, A. Franciosi, Low Resistance Graded Contacts to n-Type ZnSe, Appl. Phys. Lett. 68, 370 (1996)

42. A. Franciosi, G. Bratina, A. Bonanni, L. Sorba, T. Peluso, L. Tapfer, L. Vanzetti, Structural Properties Of ZnSe/GaAs(001) Heterostructures With Engineered Band Offsets, J. Cryst. Growth 159, 703 (1996)

43. A. Franciosi, M. Lazzarino, L. Vanzetti, J. Paggel, J., L. Sorba, T. Ozzello, G. Bratina, Improved Contact Resistance To N-Type Wide Gap II-VI Semiconductors, J. Cryst. Growth 159, 718 (1996)

44. Y. Fan, I. Karpov, G. Bratina A. Franciosi, Atomic Scale Roughness Of GaAs(001)2x4 Surfaces, J. Vac. Sci. Technol. B 14, 623 (1996)

45. G. Bratina, T. Ozzello, A. Franciosi, Interfacial Chemical Bonds, Reactions, And Band Alignment In ZnSe/GaAs(001) Heterojunctions, J. Vac. Sci. Technol. B 14, 2967 (1996)

46. G. Bratina, T. Ozzello, A. Franciosi, Chemical Bonding And Electronic Properties Of Se-Rich ZnSe-GaAs(001) Interfaces, J. Vac. Sci. Technol. B 14, 3135 (1996)

47. M. Lazzarino, G. Scarel, S. Rubini, G. Bratina, A. Bonanni, L. Sorba, A. Franciosi, Schottky Barrier Tunability In Al/ZnSe Interfaces, J. Cryst. Growth 184/185, 193 (1998)

48. M. Lazzarino, G. Scarel, S. Rubini, G. Bratina, L. Sorba, A. Franciosi, C. Berthod, N. Binggeli, A. Baldereschi, Al/ZnSe(100) Schottky-Barrier Height Versus Initial ZnSe Surface Reconstruction, Phys. Rev. B 57, R9431 (1998)

49. R. Hudej, E. Pavlica, G. Bratina, U. Lavren_i_ _tangar, A. _urca Vuk, B. Orel, Organic-Semiconductor-Based All-Solid-State Photoelectrochemical Cells, Materials For Energy Storage, Generation And Transport: Materials Research Society Symposium Proceedings 730, 1 (2002)

50. R. Hudej, G. Bratina, Electronic Transport In Perylenetetracarboxylic Dianhydride: The Role Of In Diffusion, J. Vac. Sci. Technol. A 20, 797 (2002).

51. R. Hudej, G. Bratina, Evidence Of Bipolar Charge Transport In PTCDA, Solid State Commun 123, 155 (2002)

52. R. Hudej, G. Bratina, Electrical Conductivity In Metal/3,4,9, 10-Perylenetetracarboxylic Dianhydride/Metal Structures, J. Appl. Phys. 93, 6090 (2003)

53. E. Pavlica, R. Hudej, G. Bratina, Electric-Charge Transport In Organic Semiconductors: A Monte Carlo Simulation, Mater. Technol. 37, 225 (2003)

54. N. Padeznik Gomilcek, U. Lavrencic Stangar, A. Vuk Surca, G. Bratina, I. Arcon A. Kodre, EXAFS Study Of SnO₂ Xerogel Doped With Sb And PTCDA, Phys. Scr. 115, 329 (2005)

55. E. Pavlica, G. Bratina, The Role Of Space-Charge-Induced Electric Field On Transient Photocurrent Response In Organic Semiconductors, Phys. Status Solidi B 243, 473 (2005)

56. R. Hudej, G. Bratina, and Marshall Onellion, Morphology and electronic structure of thin 3,4,9,10-perylenetetracarboxylic dianhydride layers on Si(001), Thin Solid Films 515, 1424 (2006)

57. P. Rebernik Ribic, G. Bratina, Influence of substrate morphology on growth mode of thin organic films: An atomic force microscopy study, J. Vac. Sci. Technol. B 25, 1152 (2007)

58. P. Rebernik Ribic, G. Bratina, Fabrication of Rubrene Nanowires on Vicinal (0001) sapphire surfaces, Surf. Sci. 601, L25 (2007)

59. P. Rebernik Ribic, G. Bratina, Ripening of rubrene islands, J. Phys. Chem. C 111, 18558 (2007).

60. P. Rebernik Ribic, G. Bratina, Initial stages of growth of organic semiconductors on vicinal (0001) sapphire surfaces, Surf. Sci. 602, 1368 (2008)

61. E. Pavlica, G. Bratina, Displacement current in bottom-contact organic thin-film transistor, J. Phys. D 41, 5 (2008)

62. Primo_ Rebernik Ribi_, Vivek Kalihari, Daniel C. Frisbie, and Gvido Bratina Growth of ultrathin pentacene films on polymeric substrates. Phys. Rev. B 80, 115307 (2009).

63. Andra_ Petrovi_, E. Pavlica, Gvido Bratina, Alessandro Carpentiero, Massimo Tormen, Contact resistance in organic thin film transistors, Synthetic Metals 159, 1210 (2009)

64. Andra_ Petrovic and Gvido Bratina, Interface resistivity and lifetime of thin film transistors exposed to ambient air, Appl. Phys. Lett. 94, 123301 (2009).

65. A. Petrovic, G. Bratina, The role of metal/Organic semiconductor interface on performance of organic thin film transistors, Eur. Phys. J. B 73, 341 (2010).

66. Francisco Otón, Raphael Pfattner, Egon Pavlica, Yoann Olivier, Evelyn Moreno, Joaquim Puigdollers, Gvido Bratina, Jerome Cornil, Xavier Fontrodona, Marta Mas-Torrent, Jaume Veciana, and Concepció Rovira Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors. Chem. Mater. 11, (2010)), doi: 10.1021/cm1021867

67. Martin Strojnik, Ales Omerzu, Aleksej Majki_, Peter M. Mihailovic, Junos Lukan, Gregor Bavdek, Gvido Bratina, Dean Cvetko, Peter Topolovsek, and Dragan Mihailovic, Ionization Energy and Energy Gap Structure of MoSI Molecular Wires: Kelvin Probe, Ultraviolet Photoelectron Spectroscopy, and Cyclic Voltammetry Measurements, Langmuir 27, 4296 (2011)

68. A. Radu, Gvido Bratina, et al., The influence of LiF layer and ZnO nanoparticles addings on the performances of flexible photovoltaic cells based on polymer blends, Digest J. Nanomater. Biostruct. 6, 1141 (2011)

69. Francisco Otón, Egon Pavlica, Gvido Bratina, et al., Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties, CrystEngComm 13, 6597 (2011), doi: 10.1039/C1CE05559C.

70. Francisco Otón, Egon Pavlica, Gvido Bratina, et al., Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors, Chem. mater. 23, 851 (2011), doi: 10.1021/cm1021867

71. Liyang Yu, Egon Pavlica, Gvido Bratina, et al., Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yield, Appl. phys. lett. 99, 263304 (2011)

72. Emanuele Orgiu, Egon Pavlica, Gvido Bratina, et al., Optically switchable transistor via energy-level phototuning in a bicomponent organic semiconductor, Nat. chem. 4, 675 (2012), doi: 10.1038/nchem.1384

73. Egon Pavlica, Gvido Bratina, Time-of-flight mobility of charge carriers in position-dependent electric field between coplanar electrodes, Appl. phys. lett. 101, 093304 (2012)

74. Manisha Chhikara, Egon Pavlica, Gvido Bratina, Grafold-driven nucleation of pentacene on graphene, Surf. sci. 609, L5 (2013), doi: 10.1016/j.susc.2012.11.001

75. Srinivasa Rao Pathipati, Egon Pavlica, Gvido Bratina, et al., Modulation of charge transport properties of reduced graphene oxide by submonolayer physisorption of an organic dye, Organic electronics 14, 1787 (2013)

76. Raphael Pfattner, Egon Pavlica, Michael Jaggi, Shi-Xia Liu, Silvio Decurtins, Gvido Bratina, Jaume Veciana, Marta Mas-Torrent, Concepció Rovira, Photo-induced intramolecular charge transfer in an ambipolar field-effect transistor based on a [pi]-conjugated donor-acceptor dyad, J. mater. chem. C 1, 3985 (2013), doi: 10.1039/c3tc30442f

77. Aleksandar Matkovi_, Uro_ Ralevi_, Manisha Chhikara, Milka M. Jakovljevi_, Djordje Jovanovi_, Gvido Bratina, Rado_ Gaji_, Influence of transfer residue on the optical properties of chemical vapor deposited graphene investigated through spectroscopic ellipsometry, J. appl. phys. 114, 093505 (2013), doi: 10.1063/1.4819967

78. Liyang Yu, Egon Pavlica, Gvido Bratina, et al., Influence of solid-state microstructure on the electronic performance of 5, 11-Bis(triethylsilylethynyl) anthradithiophene, Chem. mater. 25, 1823 (2013), doi: 10.1021/cm400369w

79. Aleksej Majki_, Christoph Gadermaier, Nevena _eli_, Peter Topolov_ek, Gvido Bratina, Dragan Mihailovi_, Mo₆S_9-xI_x nanowires as additives for enhanced organic solar cell performance, Sol. energy mater. sol. cells 127, 63 (2014).

80. Dorota Korte Kobylinska, Egon Pavlica, Gvido Bratina, Mladen Franko, Characterization of pure and modified TiO₂ layer on glass and aluminum support by beam deflection spectrometry, International journal of thermophysics 35, 1990 (2014), doi: 10.1007/s10765-013-1538-4

81. Marko Kete, Egon Pavlica, Fernando Fresno, Gvido Bratina, Ur_ka Lavren_i_ _tangar, Highly active photocatalytic coatings prepared by a low-temperature method, Environmental science and pollution research international 21, 11238 (2014), doi: 10.1007/s11356-014-3077-3

82. Manisha Chhikara, Egon Pavlica, Aleksandar Matkovi_, Rado_ Gaji_, Gvido Bratina, Effect of water layer at the SiO₂/graphene interface on pentacene morphology, Langmuir 30, 11681 (2014), doi: 10.1021/la502970q.

83. Srinivasa Rao Pathipati, Egon Pavlica, Andrea Schlierf, Mirella El Gemayel, Paolo Samorì, Vincenzo Palermo, Gvido Bratina, Graphene-induced enhancement of n-type mobility in perylenediimide thin films, The journal of physical chemistry C 118, 24819 (2014), doi: 10.1021/jp505463v.

84. Manisha Chhikara, Egon Pavlica, Aleksandar Matkovi_, Angela Beltaos, Rado_ Gaji_, Gvido Bratina, Pentacene on graphene : differences between single layer and bilayer, Carbon 69, 162 (2014)), doi: 10.1016/j.carbon.2013.12.002

85. Srinivasa Rao Pathipati, Egon Pavlica, Khaled Parvez, Xinliang Feng, Klaus Müllen, Gvido Bratina, Graphene flakes at the SiO₂/organic-semiconductor interface for high-mobility field-effect transistors, Organic electronics 27, 221 (2015) doi: 10.1016/j.orgel.2015.09.004.

86. Aleksandar Matkovi_, Manisha Chhikara, Marijana Mili_evi_, Uro_ Ralevi_, Borislav Vasi_, Djordje Jovanovi_, Milivoj R. Beli_, Gvido Bratina, Rado_ Gaji_, Influence of a gold substrate on the optical properties of graphene, Journal of Applied Physics 117, 015305 (2015)), doi: 10.1063/1.4905242

87. Nevena _eli_, Egon Pavlica, Milo_ Borov_ak, Jure Strle, Jo_e Buh, Janez Zava__nik, Gvido Bratina, Patrick Denk, Markus Scharber, Niyazi Serdar Sariciftcic, Dragan Mihailovi_, Factors determining large observed increases in power conversion efficiency of P3HT:PCBM solar cells embedded with Mo₆S_9-xI_x nanowires, Syntheyic metals 212, 105 (2016)), doi: 10.1016/j.synthmet.2015.12.009.

88. Robert A. Nawrocki, Egon Pavlica, Nevena _eli_, Dmitry Orlov, Matja_ Valant, Dragan Mihailovi_, Gvido Bratina, Fabrication of poly(3-hexylthiophene) nanowires for high-mobility transistors, Organic electronics 30, 92 (2016)), doi: 10.1016/j.orgel.2015.11.038.

89. Lei Zhang, Xiaolan Zhong, Egon Pavlica, Songlin Li, Alexander Klekachev, Gvido Bratina, Thomas W. Ebbesen, Emanuele Orgiu, Paolo Samori, A nanomesh scaffold for supramolecular nanowire optoelectronic devices, Nature nanotechnology 11, 900 (2016) doi: 10.1038/nnano.2016.125.

90. Tim Leydecker, Martin Herder, Egon Pavlica, Gvido Bratina, Stefan Hecht, Emanuele Orgiu, Paolo Samorì, Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend, Nature nanotechnology 11, 769 (2016) doi: 10.1038/NNANO.2016.87.