Combined RadFET/PIN/RTD sensor and read-out system

14. Feb. 2005

S. Stanic, Univ. of Tsukuba
T. Tsuboyama, KEK
G.S. Varner, University of Hawaii

Used sensors:

1. RadFET
   (radiation-sensing p-channel metal-oxide semiconductor field-effect transistor)
   Dimensions: Bare 1x1x1mm chip. Each chip contains 4 transistors, two with the
   thickness of the oxide layer 0.13um (K-range) and two with 0.95um (R-range, not used)
   Sensitivity: tested from few kRad to 2 MRad
   Manufacturer: REM Oxford Ltd., Oxford, UK
   Readout: measuring the threshold gate voltage at constant drain current (160uA)
   Readout module: University of Hawaii

2. PIN photo-diode
   Dimensions: Bare chip 2.4x2.8mm, sensitive area 6.6mm**2
   Sensitivity: light with wavelengths 320-1100nm
   Manufacturer: Hamamatsu Photonics, Si PIN Photo-diode S1223
   Readout: non-biased operation, charge created by the ionization
   collected by a radiation-resistant low noise operational amplifier
   Burr-Brown BB2107 with a negative feedback resistor R_fb

3. PT100 temperature sensor
   Readout: 4 wire connection, connectivity to Yokogawa Darwin data logger

Modules:

20050214-1 RadFET, PT100, PIN, R_fb=10MOhm
20050214-2 RadFET, PT100, PIN, R_fb=1GOhm

Module pin assignment:

1  nc (no nonnection)
2  k1d (K-range #1, drain)
3  k1g (K-range #1, gate)
4  k1s (K-range #1, source)
5  k2d
6  k2g
7  k2s
8  nc
9  t2 (PT100 conn. 2)
10 t1 (PT100 conn. 1)
11 t1
12 t2 
13 pin (1 bb2107 outA) amplified PIN diode output
14 nc  (2 bb2107 -in) amp. - input connected to PIN
15 gnd (3 bb2107 +in) amp. + input connected to ground
16 -vs (4 bb2107 -vs) - power supply voltage
17 +vs (8 bb2107 +vs) + power supply voltage
18 nc
19 nc
20 nc

Connection board:

RadFET reader output (34pin connector)

1  k1-1 (Module #1 K-range #1 gate and drain)
2  k2-1 (Module #1 K-range #2 gate and drain)
3  s1-1 (Module #1 K-range #1 source)
4  s2-1
5  k1-2
6  k2-2
7  nc
8  nc
9  s1-2
10 s2-2
other nc

PIN/RTD output (20pin connector)

1  pin-1
2  pin-2
3  gnd
4  gnd
5  +vs
6  -vs
7  t2-1
8  t1-1
9  t1-1
10 t2-1
11 t2-2
12 t1-2
13 t1-2
14 t2-2
other nc


References:

1. S. Stanic et al., Radiation monitoring in MRad Range using radiation-sensing
   field-effect transistors, KEK Preprint 2004-48 (to appear in NIM A)
2. L. Ruckman, G.S. Varner, RadFET reader users manual,
   http://www.phys.hawaii.edu/~idlab
3. D. Zontar et al., Radiation monitoring at Belle, NIM A 501 164-166 (2003)